symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 14.2 20 39 50 r jc 0.8 1.5 w junction and storage temperature range a p d c 100 50 -55 to 175 t c =100c i d continuous drain current b,g maximum units parameter t c =25c g t c =100c b 30 maximum junction-to-ambient a steady-state 110 88 200 avalanche current c 30 c/w absolute maximum ratings t a =25c unless otherwise noted v v 20 pulsed drain current power dissipation b t c =25c gate-source voltage drain-source voltage maximum junction-to-case c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w a repetitive avalanche energy l=0.1mh c 112 mj AOT424 v ds (v) = 30v i d = 110a (v gs = 10v) r ds(on) < 4m (v gs = 10v) r ds(on) < 5.5m (v gs = 4.5v) the AOT424 uses advanced trench technology to provide excellent r ds(on) , low gate charge and low gate resistance. this device is ideally suited for use as a low side switch in cpu core power conversion. standard product AOT424 is pb-free (meets rohs & sony 259 specifications). g d s g d s to-220 www.freescale.net.cn n-channel enhancement mode field general description effect transistor features
symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1 2 3 v i d(on) 110 a 3 4 t j =125c 4.7 6 4.3 5.5 m g fs 106 s v sd 0.72 1 v i s 85 a c iss 3700 4400 pf c oss 700 pf c rss 390 pf r g 0.54 0.7 q g (10v) 59.6 72 nc q g (4.5v) 30.4 37 nc q gs 9.5 nc q gd 19.8 nc t d(on) 12.5 ns t r 35.5 ns t d(off) 40 ns t f 32.5 ns t rr 35.3 42 ns q rr 30.7 nc gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz v gs =10v, v ds =15v, i d =30a total gate charge turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =0.5 , r gen =3 turn-off fall time turn-on delaytime m v gs =4.5v, i d =30a i s =1a,v gs =0v v ds =5v, i d =30a maximum body-diode continuous current input capacitance output capacitance dynamic parameters r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss a gate threshold voltage v ds =v gs i d =250 a v ds =24v, v gs =0v v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =30a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =30a reverse transfer capacitance i f =30a, di/dt=100a/ s a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the power dissipation p dsm is based on steady-state r ja and the maximum allowed junction temperature of 150c. the value in any given application depends on the user's specific board design, and the maximum temperature fo 175c may be used if the pcb or heatsink allows it. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. c: repetitive rating, pulse width limited by junction temperature t j(max) =175c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. g. the maximum current rating is limited by the package current capability. rev4: july 2008 www.freescale.net.cn AOT424 n-channel enhancement mode field effect transistor
typical electrical and thermal characteristics 0 10 20 30 40 50 60 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3v 3.5v 10v 4.0v 0 10 20 30 40 50 60 1.5 2 2.5 3 3.5 4 4.5 v gs (volts) figure 2: transfer characteristics i d (a) 2 3 4 5 0 10 20 30 40 50 60 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v i d =30a 0 2 4 6 8 10 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =30a 25c 125c i d =30a www.freescale.net.cn AOT424 n-channel enhancement mode field effect transistor
typical electrical and thermal characteristics 0 2 4 6 8 10 0 10 20 30 40 50 60 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 1000 2000 3000 4000 5000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 100 200 300 400 500 600 700 800 900 1000 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) power (w) c oss c rss v ds =15v i d =30a t j(max) =175c t c =25c 10 s 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z jc normalized transient thermal resistance d=t on /t t j,pk =t a +p dm .z jc .r jc r jc =1.5c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, single pulse t on t p d single pulse 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 s 10ms 1m 0.1s dc r ds(on) limited t j(max) =175c t c =25c 100 www.freescale.net.cn AOT424 n-channel enhancement mode field effect transistor
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